^emi-conductoi ^products., one.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 vhp push-pull power mos transistor BLF278 features ? high power gain ? easy power control ? good thermal stability ? gold metallization ensures excellent reliability. applications ? broadcast transmitters in the vhp frequency range. description dual push-pull silicon n-channel enhancement mode vertical d-mos transistor encapsulated in a 4-lead, sot262a1 balanced flange package with two ceramic caps. the mounting flange provides the common source connection for the transistors. caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. pinning - sot262a1 pin 1 2 3 4 5 description drain 1 drain 2 gate 1 gate 2 source st^ 3 top view fig.1 simplified outline and symbol. quick reference data rf performance at th = 25 c in a push-pull common source test circuit. mode of operation cw, class-b cw, class-c cw, class-ab f (mhz) 108 108 225 vds (v) 50 50 50 pl (w) 300 300 250 gp (db) >20 typ. 18 >14 typ. 16 tld (%) >60 typ. 80 >50 typ. 55 warning product and environmental safety - toxic materials this product contains beryllium oxide. the product is entirely safe provided that the beo discs are not damaged. all persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. after use, dispose of as chemical or special waste according to the regulations applying at the location of the user. it must never be thrown out with the general or domestic waste. n.i semi-t onduclors reserves ih? right to change test conditions, parameter limits ;md package dimensions without notice information t'urrmhed by nj scmi-t on juctort it believed to he both accurate and reliable vhp push-pull power mos transistor BLF278 limiting values in accordance with the absolute maximum system (iec 60134). symbol parameter conditions min. max. unit per transistor section vds vgs id plot tstg tj drain-source voltage gate-source voltage drain current (dc) total power dissipation storage temperature junction temperature tmb 25 c; total device; both sections equally loaded - - - ? -65 - 125 20 18 500 150 200 v v a w c c thermal characteristics symbol rth j-mb rth mb-h parameter thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink conditions total device; both sections equally loaded. total device; both sections equally loaded. value max. 0.35 max. 0.15 unit k/w k/w 100 'd (a) 10 1 total de\) curr (2) tmb mrahis (1) / /* / _ . . / ~\ v v (2) s 10 100 500 vds (v) nee, both sections equally loaded, ent is this area may be limited by roson- = 25 c. fig.2 dc soar. 500 ptot (w) 400 300 200 100 0 total de\) con (2) sho mge6w ^ ^ "^ 'sv^ x <1) ^^s. \^ (2) ^v \^ v^^ ^x ?v,. "?v 40 80 120 160 th (c) ice; both sections equally loaded, inuous operation, ?t-time operation during mismatch. fig. 3 power derating curves.
vhp push-pull power mos transistor BLF278 characteristics ti = 25 c unless otherwise specified. symbol parameter conditions min. typ. max. unit per transistor section v(br)dss idss igss vosth avgs 9fs 9fsi/gfs2 rdsop bsx cis cqs crs cd-f drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of both sections forward transconductance forward transconductance ratio of both sections drain-source on-state resistance drain cut-off current input capacitance output capacitance feedback capacitance drain-flange capacitance vqs = o; id = 100ma vgs = 0; vds = 50 v vgs = 20 v; vds = 0 vds = 10v; id = 50ma vds = 10v; id = 50ma vds = 10v;id = 5a vds = 10v;id = 5a vgs = 10v;ld = 5a vgs = 10v; vds = 10v vgs = 0; vds = 50 v; f = 1 mhz vgs = 0; vds = 50 v; f = 1 mhz vgs = 0; vds = 50 v; f = 1 mhz 125 - - 2 ? 4.5 0.9 - - - - - - - - - - ? 6.2 ? 0.2 25 480 190 14 5.4 - 2.5 1 4.5 100 - 1.1 0.3 - - - - - v ma ha v mv s ii a pf pf pf pf vqs group indicator group a b c d e f g h j k l m n limits (v) min. 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 max. 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 group o p q r s t u v w x y z limits (v) min. 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 max. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5
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